Features
- Low dark current
- High reliability
- Compliant with RoHS standard
Application
- This APD will be used in an OTDR as a photodetector
Electro-Optical Characteristics(25℃ laser temperature)
|
Parameter |
Symbol |
Test Condition |
Min |
Typ |
Max |
Unit |
|
Active area |
I0 |
50 |
um |
|||
|
Responsivity |
R |
=1310 nm, M=1 |
0.8 |
0.9 |
A/W |
|
| Responsivity | R |
=1550 nm, M=1 |
0.9 |
0.95 |
A/W |
|
|
Breakdown voltage |
Vbr |
Id = 10 uA |
40 |
50 |
60 |
V |
|
Dark current |
Id |
Vr= Vbr-3V |
5 |
nA |
||
|
Capacitance |
C |
f=1 MHz, Vr=0.9 Vbr |
0.38 |
0.5 |
pF |
|
|
Maximum multiplication factor |
Mmax (APD50G) |
=1310/1550nm, φe=1uW, Vr=Vbr-1.5V |
25 |
A choice |
||
| Maximum multiplication factor |
Mmax (APD50U) |
=1310/1550nm, φe=1uW, Vr=Vbr-3V |
15 |
|||
|
Cut--off frequency |
fc |
M=10 |
2.5 |
GHz |
||
|
Return Loss |
RL |
=1310 nm |
40 |
dB |
